FDS3812
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 80V 3.4A 8SOIC
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Technical Details
Technical
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A
Input Capacitance (Ciss) (Max) @ Vds 634pF @ 40V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 74mOhm @ 3.4A, 10V
FET Type 2 N-Channel (Dual)
Power - Max 900mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series PowerTrench?
Published 2001
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
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