FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 73 mJ
Pulsed Drain Current-Max (IDM) 75A
Drain Current-Max (Abs) (ID) 110A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 41A
Turn-Off Delay Time 47 ns
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A 41A
Input Capacitance (Ciss) (Max) @ Vds 2375pF @ 13V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 2.3W
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ