FDPC8012S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSF DL N CH ASYM 25V PWR CLIP33
PDF
/
Buying Options
Total Price: USD $3.04
Unit Price: USD $3.0448
≥1 USD $3.0448
≥10 USD $2.55816
≥100 USD $2.069232
≥500 USD $1.839323
≥1000 USD $1.574918
Inventory: 10966
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 192mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 800mW 900mW
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1075pF @ 13V
Current - Continuous Drain (Id) @ 25°C 13A 26A
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 3 ns
Fall Time (Typ) 3 ns
Turn-Off Delay Time 34 ns
Continuous Drain Current (ID) 88A
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 13A
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 725μm
Length 3.3mm
Width 3.3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
FDPC8012S+price,FDPC8012S+datasheet,FDPC8012S+in stock,buy+FDPC8012S,finder+FDPC8012S,FDPC8012S+tutorials,FDPC8012S+download