Drain to Source Resistance 1.2mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 13A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 27A
Turn-Off Delay Time 38 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 900mW
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)