Feedback Cap-Max (Crss) 60 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.005Ohm
Drain Current-Max (Abs) (ID) 17A
Continuous Drain Current (ID) 32A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17A 32A
Input Capacitance (Ciss) (Max) @ Vds 1715pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 17A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Operating Mode ENHANCEMENT MODE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.1W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ