FDPC1002S
RoHS
/
Package /
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
INTEGRATED CIRCUIT
PDF
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Buying Options
Total Price: USD $0.34
Unit Price: USD $0.3432
≥1 USD $0.3432
Inventory: 1354
Minimum: 1
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Drain to Source Resistance 7.3mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 40A
Drain Current-Max (Abs) (ID) 13A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 38 ns
Fall Time (Typ) 4 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 25V
Rise Time 5ns
Transistor Application SWITCHING
Turn On Delay Time 13 ns
Case Connection SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Channels 2
Number of Elements 2
JESD-30 Code S-PDSO-N8
Terminal Form NO LEAD
Max Power Dissipation 2W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Physical
Weight 207.716956mg
Surface Mount YES
Alternative Model
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