Feedback Cap-Max (Crss) 375 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 54 ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 12A 16A
Input Capacitance (Ciss) (Max) @ Vds 1705pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 8.5m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ