Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 2.2W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10.6 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 13m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Drain to Source Voltage (Vdss) 100V
Turn-Off Delay Time 17.4 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain-source On Resistance-Max 0.013Ohm
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate