FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17A
Turn-Off Delay Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A 17A
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Max Power Dissipation 2.5W
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ