FDMS3669S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSF N CH DL 30V 24A, 60A PWR56
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Buying Options
Total Price: USD $1.55
Unit Price: USD $1.5488
≥1 USD $1.5488
≥10 USD $1.2848
≥100 USD $1.02256
≥500 USD $0.865251
≥1000 USD $0.734149
Inventory: 3205
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 171mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
Terminal Form FLAT
JESD-30 Code R-PDSO-F6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 1W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C 13A 18A
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 3 ns
Fall Time (Typ) 3 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 13A
Drain-source On Resistance-Max 0.01Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 55 pF
Dimensions
Height 1.1mm
Length 5mm
Width 5.9mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Alternative Model
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