Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
Base Part Number FDMS3660S
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Turn On Delay Time 7.7 ns
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C 30A 60A
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 13A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 70 pF