FDMS3626S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 25V Dual N-Channel MOSFET
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Buying Options
Total Price: USD $1.43
Unit Price: USD $1.4256
≥1 USD $1.4256
≥10 USD $1.18536
≥100 USD $0.94336
≥500 USD $0.79823
Inventory: 629
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Width 6.1mm
Length 5.1mm
Height 1.05mm
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.005Ohm
Drain Current-Max (Abs) (ID) 17.5A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 25A
Turn-Off Delay Time 23 ns
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17.5A 25A
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 13V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 5m Ω @ 17.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Turn On Delay Time 7 ns
Case Connection DRAIN SOURCE
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 2
JESD-30 Code R-PDSO-N6
Max Power Dissipation 1W
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 90mg
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Factory Lead Time 18 Weeks
Alternative Model
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