FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain-source On Resistance-Max 0.0047Ohm
Drain Current-Max (Abs) (ID) 17.5A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 38A
Turn-Off Delay Time 41 ns
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Current - Continuous Drain (Id) @ 25°C 17.5A 38A
Input Capacitance (Ciss) (Max) @ Vds 1570pF @ 13V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 4.7m Ω @ 17.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number FDMS3620S
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ