Drain to Source Resistance 3.5mOhm
FET Feature Logic Level Gate
Input Capacitance 1.765nF
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 24 ns
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A 18A
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 13V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.6mOhm @ 16A, 10V
FET Type 2 N-Channel (Dual) Asymmetrical
Element Configuration Dual
Max Power Dissipation 2.3W
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)