Feedback Cap-Max (Crss) 115 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 16A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 18A
Turn-Off Delay Time 24 ns
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A 18A
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 13V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 5.8m Ω @ 16A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ