FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 40 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 13A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 23A
Turn-Off Delay Time 31 ns
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A 23A
Input Capacitance (Ciss) (Max) @ Vds 1785pF @ 15V
Vgs(th) (Max) @ Id 2.7V @ 250μA
Rds On (Max) @ Id, Vgs 8m Ω @ 13A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Asymmetrical
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ