FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 50 mJ
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 25V
Drain Current-Max (Abs) (ID) 15A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 31 ns
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 15A 26A
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 13V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 5.6m Ω @ 15A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ