FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.11Ohm
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3.1A
Turn-Off Delay Time 7.2 ns
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 15V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type 4 N-Channel (H-Bridge)
Turn On Delay Time 4.1 ns
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Max Power Dissipation 1.9W
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series GreenBridge? PowerTrench?
Operating Temperature -55°C~150°C TJ