FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -80V
Drain-source On Resistance-Max 0.11Ohm
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2.6A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 100V 80V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A 2.6A
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type 2 N and 2 P-Channel (H-Bridge)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number FDMQ8203
Max Power Dissipation 2.5W
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series GreenBridge? PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ