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RoHS
RoHS RoHS compliant
Package 12-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
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Buying Options
Total Price: USD $1.36
Unit Price: USD $1.364
≥1 USD $1.364
≥10 USD $1.1352
≥100 USD $0.903672
≥500 USD $0.76465
≥1000 USD $0.648789
Inventory: 1126
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.5mm
Length 5mm
Height 750μm

Technical

Nominal Vgs 3 V
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -80V
Drain-source On Resistance-Max 0.11Ohm
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 3V
Continuous Drain Current (ID) 2.6A
Fall Time (Typ) 2.7 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 100V 80V
Rise Time 2.8 ns
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A 2.6A
Input Capacitance (Ciss) (Max) @ Vds 210pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 110m Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type 2 N and 2 P-Channel (H-Bridge)
Case Connection DRAIN
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 4
Base Part Number FDMQ8203
Max Power Dissipation 2.5W
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e4
Series GreenBridge? PowerTrench?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 210mg
Number of Pins 12
Package / Case 12-WDFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 9 Weeks

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