FDML7610S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET N-CH 30V 12A/17A 8-Pin MLP EP T/R
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Buying Options
Total Price: USD $1.56
Unit Price: USD $1.5576
≥1 USD $1.5576
≥10 USD $1.29712
≥100 USD $1.03224
≥500 USD $0.873453
≥1000 USD $0.741118
Inventory: 1488
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 300mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.2W
JESD-30 Code R-PDSO-N6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Power - Max 800mW 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A 17A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 17A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.8 V
Dimensions
Height 750μm
Length 3mm
Width 4.5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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