FDME1024NZT
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Dual N-Channel Power Trench? MOSFET 20V, 3.8A, 66mO
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Buying Options
Total Price: USD $0.77
Unit Price: USD $0.7744
≥1 USD $0.7744
≥10 USD $0.63184
≥100 USD $0.491656
≥500 USD $0.416715
≥1000 USD $0.33946
≥3000 USD $0.319563
Inventory: 61
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Number of Pins 6
Weight 25.2mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ESD PROTECTION
Subcategory FET General Purpose Power
Max Power Dissipation 1.4W
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3W
Case Connection DRAIN
Turn On Delay Time 4.5 ns
Power - Max 600mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 66m Ω @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Rise Time 2 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 1.7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 3.8A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 3.4A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 40 pF
Dimensions
Height 500μm
Length 1.6mm
Width 1.6mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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