FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 100V
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 21A
Turn-Off Delay Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A
Input Capacitance (Ciss) (Max) @ Vds 980pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Source
Turn On Delay Time 8.4 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 23W
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ