FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 80V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 26 ns
Drain to Source Voltage (Vdss) 80V
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 40V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 8.2m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ