FDMC89521L
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 60V Dual N-Channel Power Trench MOSFET
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Buying Options
Total Price: USD $1.75
Unit Price: USD $1.7512
≥1 USD $1.7512
≥10 USD $1.45552
≥100 USD $1.158256
≥500 USD $0.980074
≥1000 USD $0.831582
Inventory: 1148
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 196mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Additional Feature AVALANCHE ENERGY RATED
Max Power Dissipation 800mW
JESD-30 Code S-PDSO-N4
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 7.9 ns
Power - Max 1.9W Ta 16W Tc
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C 8.2A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 2.1 ns
Fall Time (Typ) 1.7 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 8.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 15 pF
Dimensions
Height 800μm
Length 3mm
Width 3mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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