FDMC8200S
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
DUAL N CH MOSFET, POWERTRENCH, 30V, 18A, POWER33 - More Details
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Buying Options
Total Price: USD $1.04
Unit Price: USD $1.0384
≥1 USD $1.0384
≥10 USD $0.84832
≥100 USD $0.659648
≥500 USD $0.559099
≥1000 USD $0.455444
Inventory: 1157
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 186mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 20MOhm
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Power - Max 700mW 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 6A 8.5A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6A
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 2.3 V
Feedback Cap-Max (Crss) 30 pF
Dimensions
Height 750μm
Length 3mm
Width 3mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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