Turn On Time-Max (ton) 30 ns
Feedback Cap-Max (Crss) 30 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 8A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 38 ns
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A 12A
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 20m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN-SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 900mW
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ