FET Technology METAL-OXIDE SEMICONDUCTOR
Drain Current-Max (Abs) (ID) 6.3A
Continuous Drain Current (ID) 2.4A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 150V
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta 900mA Tc
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 75V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 155m Ω @ 2.4A, 10V
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.9W
Subcategory Other Transistors
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ