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RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
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Buying Options
Total Price: USD $0.88
Unit Price: USD $0.88323
≥1 USD $0.88323
≥10 USD $0.83323
≥100 USD $0.78607
≥500 USD $0.74158
≥1000 USD $0.6996
Inventory: 4832
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 3mm
Length 3mm
Height 800μm

Technical

Feedback Cap-Max (Crss) 30 pF
FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 1.5V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 3 ns
Drain to Source Voltage (Vdss) 40V
Rise Time 3 ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 7 ns
Case Connection DRAIN SOURCE
Power Dissipation 1.9W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Channels 2
Number of Elements 1
Max Power Dissipation 800mW
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e4
Series PowerTrench?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 196mg
Number of Pins 8
Package / Case 8-PowerWDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 3 hours ago)
Factory Lead Time 7 Weeks

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