Feedback Cap-Max (Crss) 30 pF
FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 19 ns
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1975pF @ 20V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Rds On (Max) @ Id, Vgs 10m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 800mW
Additional Feature AVALANCHE RATED
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ