Feedback Cap-Max (Crss) 55 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.009Ohm
Drain Current-Max (Abs) (ID) 12A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 23 ns
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Current - Continuous Drain (Id) @ 25°C 12A 16A
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 800mW
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ