Feedback Cap-Max (Crss) 30 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.0116Ohm
Drain Current-Max (Abs) (ID) 29A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 15V 2360pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 11.6m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Case Connection DRAIN SOURCE
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ