Drain to Source Resistance 120mOhm
FET Feature Logic Level Gate
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 15 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3A
Input Capacitance (Ciss) (Max) @ Vds 435pF @ 10V
Vgs(th) (Max) @ Id 1.3V @ 250μA
Rds On (Max) @ Id, Vgs 120mOhm @ 3A, 4.5V
FET Type 2 P-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 700mW
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ