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FDMA1024NZ

ON Semiconductor
RoHS
RoHS RoHS compliant
Package 6-VDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R
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Buying Options
Total Price: USD $1.15
Unit Price: USD $1.1528
≥1 USD $1.1528
≥10 USD $0.93984
≥100 USD $0.730928
≥500 USD $0.619538
≥1000 USD $0.50468
Inventory: 1261
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VDFN Exposed Pad
Number of Pins 6
Weight 40mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series PowerTrench?
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 54MOhm
Subcategory FET General Purpose Power
Max Power Dissipation 700mW
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.4W
Case Connection DRAIN
Turn On Delay Time 5.3 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 54m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 4.5V
Rise Time 2.2 ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 700mV
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 700 mV

Dimensions

Height 750μm
Length 2mm
Width 2mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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