FET Feature Logic Level Gate
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -2.8A
Turn-Off Delay Time 13 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.8A
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 2.8A, 4.5V
FET Type 2 P-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 900mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ