FDG6332C
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
ON SEMICONDUCTOR - FDG6332C - Dual MOSFET, N and P Channel, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
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Buying Options
Total Price: USD $0.42
Unit Price: USD $0.4224
≥1 USD $0.4224
≥10 USD $0.3608
≥100 USD $0.250976
≥500 USD $0.195941
≥1000 USD $0.159262
Inventory: 1397
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 1.25mm
Length 2mm
Height 1.1mm
Technical
FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Threshold Voltage 1.1V
Continuous Drain Current (ID) 700mA
Turn-Off Delay Time 6 ns
Fall Time (Typ) 14 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Rise Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 700mA 600mA
Input Capacitance (Ciss) (Max) @ Vds 113pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 300m Ω @ 700mA, 4.5V
Transistor Application SWITCHING
FET Type N and P-Channel
Power Dissipation 300mW
Operating Mode ENHANCEMENT MODE
Current 7A
Element Configuration Dual
Voltage 20V
Number of Elements 2
Current Rating 700mA
Terminal Form GULL WING
Max Power Dissipation 300mW
Subcategory Other Transistors
Resistance 300MOhm
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series PowerTrench?
Published 2017
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 6
Package / Case 6-TSSOP, SC-88, SOT-363
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 10 Weeks
Alternative Model
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