FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 25V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 220mA
Turn-Off Delay Time 55 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate Charge (Qg) (Max) @ Vgs 0.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 220mA 410mA
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 4 Ω @ 220mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 300mW
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ