Drain to Source Resistance 10Ohm
FET Feature Logic Level Gate
Drain to Source Breakdown Voltage -25V
Gate to Source Voltage (Vgs) -8V
Continuous Drain Current (ID) -140mA
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 0.31nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 140mA
Input Capacitance (Ciss) (Max) @ Vds 12pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 10Ohm @ 140mA, 4.5V
FET Type 2 P-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 300mW
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ