Feedback Cap-Max (Crss) 5 pF
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.35Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.2A
Turn-Off Delay Time 5.4 ns
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 350m Ω @ 1.2A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 3.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 690mW
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ