FDC6506P
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Trans MOSFET P-CH 30V 1.8A 6-Pin SuperSOT T/R
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Buying Options
Total Price: USD $5.97
Unit Price: USD $5.970429
≥1 USD $5.970429
≥10 USD $5.632478
≥100 USD $5.313658
≥500 USD $5.012886
≥1000 USD $4.729138
Inventory: 1147
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 170MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating -1.8A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 7 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 3.5nC @ 10V
Rise Time 8 ns
Fall Time (Typ) 8 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Dimensions
Height 1.1mm
Length 3mm
Width 1.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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