FET Feature Logic Level Gate
Max Junction Temperature (Tj) 150°C
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 11 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A 2A
Input Capacitance (Ciss) (Max) @ Vds 282pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 95m Ω @ 2.5A, 10V
Transistor Application SWITCHING
Turn On Delay Time 4.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 960mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ