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RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET P-CH 12V 2.5A 6-Pin SuperSOT T/R
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Buying Options
Total Price: USD $0.75
Unit Price: USD $0.748
≥1 USD $0.748
≥10 USD $0.64504
≥100 USD $0.446336
≥500 USD $0.372962
≥1000 USD $0.317407
Inventory: 1162
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating -2.5A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 960mW
Turn On Delay Time 9 ns
Power - Max 700mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 455pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.5A
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 14 ns
Fall Time (Typ) 14 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) -2.5A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs 700 mV

Dimensions

Height 1.1mm
Length 3mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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