FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 1.9A
Turn-Off Delay Time 14 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 441pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 170m Ω @ 1.9A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 960mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ