Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 960mW
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 500m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 153pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 100V
FET Technology METAL-OXIDE SEMICONDUCTOR