TC7920K6-G
RoHS 
RoHS compliant
RoHS compliantPackage 12-VFDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
TWO PAIR, N- AND P-CH ENHANCEMENT-MODE MOSFET w/DRAIN-DIODES12 VDFN 4x4x1.0mm T/R
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Buying Options
Total Price: USD $2.16
Unit Price: USD $2.1648
≥1 USD $2.1648
≥10 USD $1.8128
≥100 USD $1.6544
Inventory: 1193
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
FET Feature Standard
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 200V
Drain-source On Resistance-Max 7Ohm
Turn-Off Delay Time 20 ns
Fall Time (Typ) 15 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 200V
Rise Time 15ns
Input Capacitance (Ciss) (Max) @ Vds 52pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Rds On (Max) @ Id, Vgs 10 Ω @ 1A, 10V
Transistor Application SWITCHING
FET Type 2 N and 2 P-Channel
Turn On Delay Time 10 ns
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Number of Elements 4
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Terminal Position DUAL
Additional Feature LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
ECCN Code EAR99
Number of Terminations 12
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e4
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 12
Package / Case 12-VFDFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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