IRF9953PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 30V 2.3A 8-SOIC
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Buying Options
Total Price: USD $0.75
Unit Price: USD $0.7524
≥1 USD $0.7524
≥10 USD $0.6175
≥100 USD $0.59755
≥500 USD $0.57855
≥1000 USD $0.55955
Inventory: 1101
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -30V
Max Power Dissipation 2W
Current Rating -2.3A
Base Part Number IRF9953PBF
Number of Elements 2
Element Configuration Dual
Power Dissipation 2W
Turn On Delay Time 9.7 ns
Power - Max 2W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.3A
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 190pF
FET Feature Standard
Drain to Source Resistance 250mOhm
Rds On Max 250 mΩ
Nominal Vgs -1 V
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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