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IRF9358TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 30V 9.2A 8SOIC
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Buying Options
Total Price: USD $1.17
Unit Price: USD $1.1704
≥1 USD $1.1704
≥10 USD $0.95744
≥100 USD $0.744392
≥500 USD $0.630925
≥1000 USD $0.513955
≥3000 USD $0.483833
Inventory: 16847
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF9358PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 5.7 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16.3m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 7.2 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 69 ns
Turn-Off Delay Time 146 ns
Continuous Drain Current (ID) 9.2A
Threshold Voltage -1.8V
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0163Ohm
Drain to Source Breakdown Voltage -30V
Pulsed Drain Current-Max (IDM) 73A
Avalanche Energy Rating (Eas) 210 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -1.8 V

Dimensions

Height 1.5mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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