IRF8513TRPBF
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 8A/11A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.46
Unit Price: USD $0.4617
≥1 USD $0.4617
≥10 USD $0.37905
≥100 USD $0.3667
≥500 USD $0.3553
≥1000 USD $0.3439
Inventory: 1262
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 2.4W
Terminal Form GULL WING
Base Part Number IRF8513PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Power - Max 1.5W 2.4W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15.5m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 766pF @ 15V
Current - Continuous Drain (Id) @ 25°C 8A 11A
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Turn-Off Delay Time 9.3 ns
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.0155Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 64A
Avalanche Energy Rating (Eas) 49 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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