IRF7379PBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 8-SOIC
PDF
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Buying Options
Total Price: USD $0.24
Unit Price: USD $0.24035
≥1 USD $0.24035
≥10 USD $0.1976
≥100 USD $0.19095
≥500 USD $0.18525
≥1000 USD $0.1786
Inventory: 26728
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.9878mm
Length 4.9784mm
Height 1.4986mm
Technical
Nominal Vgs 1 V
FET Feature Standard
FET Technology METAL-OXIDE SEMICONDUCTOR
Dual Supply Voltage 30V
Pulsed Drain Current-Max (IDM) 46A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.045Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1V
Continuous Drain Current (ID) 4.3A
Turn-Off Delay Time 25 ns
Fall Time (Typ) 18 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Rise Time 17ns
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.8A 4.3A
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 5.8A, 10V
Transistor Application SWITCHING
FET Type N and P-Channel
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Row Spacing 6.3 mm
Number of Elements 2
Base Part Number IRF7379PBF
Current Rating 5.8A
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 2.5W
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
ECCN Code EAR99
Termination SMD/SMT
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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