IRF7342PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Transistor MOSFET P Channel 55 Volt 3.4 Amp 8 Pin SOIC
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.51015
≥1 USD $0.51015
≥10 USD $0.41895
≥100 USD $0.40565
≥500 USD $0.39235
≥1000 USD $0.38
Inventory: 100095
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 39 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7342PBF
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 55V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 3.4A
Drain-source On Resistance-Max 0.105Ohm
Pulsed Drain Current-Max (IDM) 27A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 114 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 2W
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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