Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 110 ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 16V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 7A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 7.6 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number IRF7331PBF
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 7A