Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Base Part Number IRF7329PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.2A
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) -9.2A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate