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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2P-CH 12V 9.2A 8-SOIC
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Buying Options
Total Price: USD $1.52
Unit Price: USD $1.52095
≥1 USD $1.52095
≥10 USD $1.2483
≥100 USD $1.20935
≥500 USD $1.1704
≥1000 USD $1.13145
Inventory: 1160
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 13 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series HEXFET?
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 17MOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -12V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -9.2A
Base Part Number IRF7329PBF
Number of Elements 2
Row Spacing 6.3 mm
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.2A
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 8.6 ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 260 ns
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) -9.2A
Threshold Voltage -900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Dual Supply Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -900 mV

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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